SILICIDE FORMATION AND SILICIDE-MEDIATED CRYSTALLIZATION OF NICKEL-IMPLANTED AMORPHOUS-SILICON THIN-FILMS
SILICIDE FORMATION AND SILICIDE-MEDIATED CRYSTALLIZATION OF NICKEL-IMPLANTED AMORPHOUS-SILICON THIN-FILMS
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DOI：
10.1063/1.353446
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发表时间：
1993-06-15
影响因子：
3.2
通讯作者：
BATSTONE, JL
中科院分区：
文献类型：
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作者：
HAYZELDEN, C;BATSTONE, JL
用原位透射电子显微镜研究了Ni离子注入非晶硅薄膜中孤立的二硅化镍沉淀的成核和生长以及随后的低温硅化物介导的硅晶化过程。NiSi 2微晶的空间分布的分析强烈建议在成核过程中发生的网站饱和。原位观察到NiSi 2沉淀物在低至约484 ℃的温度下迁移通过非晶Si薄膜，留下结晶Si的踪迹。最初，在八面体NiSi 2的{111}面上形成的外延Si的薄区域沉淀出具有共格界面的沉淀物，该共格界面由高分辨率电子显微镜显示为A型。NiSi 2沉淀物的迁移导致Si的针状生长，其平行于[111]方向。结晶Si的生长速率受到通过NiSi 2沉淀物的扩散的限制，并且在507和660 ℃下测定有效扩散率。提出了提高晶体硅生长速率的机制。
The nucleation and growth of isolated nickel disilicide precipitates in Ni-implanted amorphous Si thin films and the subsequent low-temperature silicide-mediated crystallization of Si was studied using in situ transmission electron microscopy. Analysis of the spatial distribution of the NiSi2 Precipitates strongly suggested the occurrence of site saturation during nucleation. NiSi2 precipitates were observed in situ to migrate through the amorphous Si thin films leaving a trail of crystalline Si at temperatures as low as approximately 484-degrees-C. Initially, a thin region of epitaxial Si formed on {111} faces of the octahedral NiSi2 precipitates with a coherent interface which was shown by high-resolution electron microscopy to be Type A. Migration of the NiSi2 precipitates led to the growth of needles of Si which were parallel to [111] directions. The growth rate of the crystalline Si was limited by diffusion through the NiSi2 precipitates, and an effective diffusivity was determined at 507 and 660-degrees-C. A mechanism for the enhanced growth rate of crystalline Si is proposed.