Study on the interface coupling effect in PbZr0.52Ti0.48O3/Ba(Mg1/3Ta2/3)O3 thin films
Study on the interface coupling effect in PbZr0.52Ti0.48O3/Ba(Mg1/3Ta2/3)O3 thin films
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PbZr0.52Ti0.48O3/Ba(Mg1/3Ta2/3)O-3薄膜界面耦合效应研究
DOI：
10.1007/s10854-019-01818-8
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发表时间：
2019-08-01
影响因子：
2.8
通讯作者：
Cai, Songtao
中科院分区：
文献类型：
--
作者：
Wu, Zhi;Chen, Wen;Cai, Songtao
本文研究了PbZr0.52Ti0.48O3/Ba1/3Ta2/3(PZT/BMT)薄膜，研究了PZT/BMT薄膜的界面耦合效应。结果表明，PZT/BMT薄膜的介电常数随界面数的增加而增大，介电损耗随界面数的增加而减小。建立了界面极化模型，总介电常数随界面数目和界面介电常数的增加而线性增加。随着界面数的增加，颗粒的驰豫激活能从0.49 eV减小到0.45 eV，而界面的驰豫激活能从0.64 eV增大到0.83 eV。空间电荷可以很容易地从颗粒移动到界面，这对界面的介电常数有积极的贡献。
This paper was focused on the PbZr0.52Ti0.48O3/Ba(Mg1/3Ta2/3)O-3 (PZT/BMT) thin films and the interface coupling effect in PZT/BMT thin films was studied. The results show that the dielectric constant of PZT/BMT thin films increases and the dielectric loss of PZT/BMT thin films decreases with the increase of interface number. The interface polarization model has been set up and the total dielectric constant increases linearly with the interface number and dielectric constant of interface. As the interface number increases, the relaxation activation energy of grains decreases from 0.49 to 0.45 eV while that of interfaces increases from 0.64 to 0.83 eV. The space charges can easily move from grains to interfaces, which has a positive contribution to the dielectric constant of interface.