Electrical tuning of Rashba spin-orbit interaction in multigated InAs nanowires
Electrical tuning of Rashba spin-orbit interaction in multigated InAs nanowires
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DOI：
10.1103/physrevb.94.035444
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发表时间：
2016-01
影响因子：
3.7
通讯作者：
Zolt'an Scherubl;G. Fulop;M. Madsen;J. Nygrard;S. Csonka
中科院分区：
文献类型：
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作者：
Zolt'an Scherubl;G. Fulop;M. Madsen;J. Nygrard;S. Csonka
砷化铟纳米线（NW）是制造量子电子器件的一个有前途的平台，除其他优点外，它们还具有强大的自旋轨道相互作用（SOI）。基于自旋的量子器件需要 SOI 的受控调谐。在这项研究中，我们研究了通过放置在 NW 相对两侧的背栅和两个侧栅产生的静电场来调节 SOI 的可能性。通过微弱的反局域化效应来分析SOI的强度。我们证明，SOI 的强度可以通过 NW 上的电场强烈调节至 2 倍，同时平均电子密度保持恒定。此外，还引入了一个简单的静电模型来计算 SOI 的预期变化。实验结果与估计的由栅极感应电场产生的 Rashba 型 SOI 之间存在良好的一致性。
Indium arsenide nanowires (NWs) are a promising platform to fabricate quantum electronic devices, among other advantages they have strong spin-orbit interaction (SOI). The controlled tuning of the SOI is desired in spin-based quantum devices. In this study we investigate the possibility of tuning the SOI by electrostatic fields generated by a back gate and two side gates placed on the opposite sides of the NW. The strength of the SOI is analyzed by weak anti-localization effect. We demonstrate that the strength of the SOI can be strongly tuned up to a factor of 2 with the electric field across the NW, while the average electron density is kept constant. Furthermore, a simple electrostatic model is introduced to calculate the expected change of the SOI. Good agreement is found between the experimental results and the estimated Rashba-type SOI generated by the gate-induced electric field.