Scintillation and optical stimulated luminescence of Ce-doped CaF2
Scintillation and optical stimulated luminescence of Ce-doped CaF2
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DOI：
10.1016/j.radmeas.2014.03.020
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发表时间：
2014-12-01
影响因子：
2
通讯作者：
Nanto, Hidehito
中科院分区：
文献类型：
--
作者：
Yanagida, Takayuki;Fujimoto, Yutaka;Nanto, Hidehito
研究了Tokuyama公司制备的ce0.1 ~ 20%掺杂CaF2晶体的闪烁和光激发发光特性。在x射线诱导闪烁光谱中，Ce3+ 5d -4f跃迁引起的发光出现在320 nm左右，衰变时间通常为40 ns。在Am-241 5.5 MeV α射线照射下，0.1%掺杂的发光材料的闪烁产光率最高，且随Ce浓度的增加而单调降低。在550或830 nm的x射线照射下，所有样品在320 nm左右观察到光激发发光。因此，光激发发光强度与Ce浓度成正比。因此，在掺ce的CaF2体系中，闪烁和光激发发光形成了互补关系。(C) 2014 Elsevier Ltd.版权所有。
Scintillation and optical stimulated luminescence of Ce 0.1-20% doped CaF2 crystals prepared by Tokuyama Corp. were investigated. In X-ray induced scintillation spectra, luminescence due to Ce3+ 5d -4f transition appeared around 320 nm with typically 40 ns decay time. By Am-241 5.5 MeV alpha-ray irradiation, 0.1% doped one showed the highest scintillation light yield and the light yield monotonically decreased with Ce concentrations. Optically stimulated luminescence after X-ray irradiation was observed around 320 nm under 550 or 830 nm stimulation in all samples. As a result, intensities of optically stimulated luminescence were proportional to Ce concentrations. Consequently, scintillation and optically stimulated luminescence resulted to have a complementary relation in Ce-doped CaF2 system. (C) 2014 Elsevier Ltd. All rights reserved.