Thermoelectric Properties of Cobalt Antimony Thin Films Deposited on Flexible Substrates by Radio Frequency Magnetron Sputtering
Thermoelectric Properties of Cobalt Antimony Thin Films Deposited on Flexible Substrates by Radio Frequency Magnetron Sputtering
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DOI：
10.1007/s11664-014-3546-y
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发表时间：
2015-02-01
影响因子：
2.1
通讯作者：
Zhang, Dong-Ping
中科院分区：
文献类型：
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作者：
Fan, Ping;Zhang, Yin;Zhang, Dong-Ping
采用射频磁控溅射法在柔性衬底上制备了不同溅射功率的钴锑薄膜。当溅射功率为55 W时，薄膜中Co与Sb的原子比最接近1：3。在室温下沉积的薄膜的热电性能是不显眼的，由于其非晶结构，其特征在于由x射线衍射。为了提高薄膜的热电性能，在443 ~ 593 K范围内对溅射功率为55 W的钴锑薄膜进行了不同温度的退火处理。结果表明，所有CoSb 3薄膜均为n型导电，在493-593 K退火后的CoSb 3薄膜为多晶，具有（310）择优取向。在543 K退火的CoSb_3薄膜的Seebeck系数随测量温度（323-473 K）的升高而增大，最大值为-88 μ V/K，是柔性衬底上沉积的CoSb_3薄膜的最大值。
Cobalt antimony thin films were deposited on flexible substrates at room temperature by radio frequency magnetron sputtering with different sputtering power. The atomic ratio of Co to Sb in the cobalt antimony thin film was closest to 1:3 when the sputtering power was 55 W. The thermoelectric properties of the thin films deposited at room temperature were inconspicuous due to their amorphous microstructure which was characterized by x-ray diffraction. To enhance the thermoelectric properties of the thin films, cobalt antimony thin film deposited by sputtering power of 55 W was annealed at various temperatures ranging from 443 K to 593 K. It was found that all the thin films had n-type conductivity and the CoSb3 thin films annealed at 493-593 K were polycrystalline with (310) preferential orientation. The Seebeck coefficient of CoSb3 thin films annealed at 543 K increased with the raising of the measuring temperature (323-473 K), and the maximum Seebeck coefficient was -88 mu V/K, which is the highest value for CoSb3 thin films deposited on flexible substrate.