β -phase-domain-free α-MnAs thin films on GaAs(001) by postgrowth annealing
β -phase-domain-free α-MnAs thin films on GaAs(001) by postgrowth annealing
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通过后生长退火在 GaAs(001) 上形成无 β 相域 α-MnAs 薄膜
DOI：
10.1063/1.2035316
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发表时间：
2005
影响因子：
4
通讯作者：
J. Ketterson
中科院分区：
文献类型：
--
作者：
J. Song;Y. Cui;J. Lee;J. Ketterson
研究了生长后退火对在 GaAs(001) 衬底上生长的异质外延 MnAs 薄膜的影响。在室温下表面形貌中观察到的生长样品的 β-MnAs 相域在生长后退火后完全消失。为了支持这一发现，在 300K 时也没有观察到 β-MnAs 相域对磁滞回线的顺磁性贡献。我们将这些效应的根源归因于 MnAs 薄膜中弹性应变的松弛。
Postgrowth annealing effects on a heteroepitaxial MnAs thin film grown on a GaAs(001) substrate have been investigated. The β‐MnAs phase domains of an as-grown sample, observed as dark stripes in the surface topography at room temperature, disappear completely after postgrowth annealing. In support of this finding, the paramagnetic contribution to the magnetic hysteresis loop arising from the β‐MnAs phase domains is also not observed at 300K. We attribute the origin of these effects to relaxation of the elastic strain in the MnAs thin film.