Interface analysis of Y-Ba-Cu-O films on Al-coated Si substrates
Interface analysis of Y-Ba-Cu-O films on Al-coated Si substrates
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镀铝硅衬底上 Y-Ba-Cu-O 薄膜的界面分析
DOI：
10.1063/1.101489
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发表时间：
1989
影响因子：
4
通讯作者：
J. Reardon
中科院分区：
文献类型：
--
作者：
T. Asano;K. Tran;A. Byrne;Mahmudur Rahman;Cary Y. Yang;J. Reardon
采用等离子喷涂法在Al涂层Si衬底上制备了Y-Ba-Cu-O薄膜。Al缓冲层似乎在产生无裂纹粘合剂Y-Ba-Cu-O膜方面是有效的。电阻测量表明，薄膜在90 K以下呈现超导相。X射线显微分析和X射线光电子能谱的结果证实，Al缓冲层形成了Al 2 O3层，并防止了Cu在膜/基底界面处的沉淀。
Y‐Ba‐Cu‐O films were deposited on Al‐coated Si substrates by the plasma‐spray method. The Al buffer layer appears to be effective in yielding crack‐free adhesive Y‐Ba‐Cu‐O films. Resistance measurements indicate that the films exhibit a superconducting phase below 90 K. Results of x‐ray microanalysis and x‐ray photoelectron spectroscopy confirm that the Al buffer forms an Al2O3 layer and prevents precipitation of Cu at the film/substrate interface.