Photon correlation studies of single GaN quantum dots
Photon correlation studies of single GaN quantum dots
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DOI：
10.1063/1.2006987
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发表时间：
2005-02
影响因子：
4
通讯作者：
C. Santori;S. Gotzinger;Y. Yamamoto;S. Kako;K. Hoshino;Y. Arakawa
中科院分区：
文献类型：
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作者：
C. Santori;S. Gotzinger;Y. Yamamoto;S. Kako;K. Hoshino;Y. Arakawa
我们目前的测量的二阶相干函数从单个GaN量子点的发射。在某些情况下，观察到很大程度的光子反聚束，证明了单个量子系统的隔离。对于选定的量子点，我们研究了光子反聚束与激发功率和温度的关系。采用脉冲激发，我们演示了一个紫外触发的单光子源，工作波长为358nm。
We present measurements of the second-order coherence function on emission from single GaN quantum dots. In some cases a large degree of photon antibunching is observed, demonstrating isolation of a single quantum system. For a selected quantum dot, we study the dependence of photon antibunching on excitation power and temperature. Using pulsed excitation, we demonstrate an ultraviolet triggered single-photon source operating at a wavelength of 358nm.