Three- and four-point Hamer-type MOSFET parameter extraction methods revisited
Three- and four-point Hamer-type MOSFET parameter extraction methods revisited
复制标题
重新审视三点和四点 Hamer 型 MOSFET 参数提取方法
DOI：
10.1109/icmts.2013.6528161
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
K. Jeppson
中科院分区：
文献类型：
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作者：
K. Jeppson
本文对三点Hamer型和四点Karlsson & Jeppson型MOSFET参数提取方法的鲁棒性和数据点的选取进行了重新讨论。本文还讨论了Hamming提出的用有理函数描述的模型拟合实测数据的方法，并给出了该方法如何计算加权数据点。还研究了一种替代方法，其中使用MOSFET电阻值代替提取过程的电流值，以尝试提高提取方法的鲁棒性。最后，它示出了如何三点提取方法不仅可以应用到MOSFET的饱和区，而且可以应用到MOSFET的饱和区，用于分离体效应和速度饱和的参数。
In this paper the three-point Hamer type and four-point Karlsson & Jeppson type MOSFET parameter extraction methods are revisited concerning robustness and selection of data points. The method for fitting models described by rational functions to measured data proposed by Hamming is also discussed and it is shown how this method calculates its weighted data points. An alternative method where MOSFET resistance values are used instead of current values for the extraction procedure is also investigated in an attempt to increase extraction method robustness. Finally, it is shown how the three point extraction method can be applied not only to the triode region but also to the MOSFET saturation region for separating parameters for the body effect and the velocity saturation.