The semiconducting properties of HgTe-In2Te3 alloys
The semiconducting properties of HgTe-In2Te3 alloys
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DOI：
10.1088/0508-3443/15/6/302
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发表时间：
1964-06
期刊：
影响因子：
--
通讯作者：
P. M. Spencer
中科院分区：
文献类型：
--
作者：
P. M. Spencer
The paper is concerned with the effects of alloying the defect structure semiconducting compound indium sesquitelluride, In2\[=square, open\]Te3, which has a low electronic mobility and an energy gap of about 1.1 ev, with the zinc blende structure semimetal, mercury telluride HgTe. A phase diagram for the pseudo-binary system is proposed on the basis of x-ray and optical examination of the samples which were made up every 5 mol.% variation in composition and annealed for 60 days at 600°C. The mercury telluride type phase changes at about 15 mol.% In2Te3 to a semiconducting phase of the same structure, which is often obtained p-type, with an energy gap of 0.3 ev. Ordered structure compounds, possibly peritectic, occur at Hg5In2\[=square, open\]Te8 and HgIn2\[=square, open\]Te4, and there is a disorder compound Hg3In2\[=square, open\]Te6, corresponding to the 50 mol.% composition, which may represent the maximum in the solidus. The results of the optical, electrical and thermal measurements are discussed in terms of this phase diagram. Since both p- and n-type material were produced, values for the mobilities, effective masses and intrinsic carrier concentration have been calculated, using the model of the simple energy band semiconductor. The effect of ordering in the system is to increase the electron and hole mobilities and also the optical energy gap.
