Synthesis of yttrium oxide thin films with and without the use of organic self-assembled monolayers
Synthesis of yttrium oxide thin films with and without the use of organic self-assembled monolayers
复制标题
DOI：
10.1063/1.119679
复制
发表时间：
1997-08
影响因子：
4
通讯作者：
M. Agarwal;M. Deguire;A. Heuer
中科院分区：
文献类型：
--
作者：
M. Agarwal;M. Deguire;A. Heuer
以YNO3·5H2O和尿素水溶液为溶剂，在80°C的温度下，在裸单晶硅片和涂有磺酸官能化有机自组装单层硅片上沉积了含y薄膜。沉积的薄膜被认为是一种无定形的碱式碳酸钇，可以在600℃的空气中完全转变成Y2O3晶体。对这些薄膜的电容电压测量显示出良好的介电性能，其相对介电常数为18，比SiO2的介电常数高4倍以上。
Thin Y-containing films have been deposited at 80 °C from aqueous solutions of YNO3⋅5H2O and urea on bare single crystal Si wafers, and on Si wafers coated with sulfonate-functionalized organic self-assembled monolayers. The as-deposited films are believed to be an amorphous yttrium basic carbonate and can be completely transformed at 600 °C in air to crystalline Y2O3. Capacitance–voltage measurements on these films showed good dielectric properties, with a relative permitivity of 18, more than a factor of four higher than that of SiO2.