Damp-heat durability comparison of Al-doped ZnO transparent electrodes deposited at low temperatures on glass and PI-tape/PC substrates
Damp-heat durability comparison of Al-doped ZnO transparent electrodes deposited at low temperatures on glass and PI-tape/PC substrates
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玻璃和 PI 胶带/PC 基板上低温沉积的 Al 掺杂 ZnO 透明电极的湿热耐久性比较
DOI：
10.1016/j.ceramint.2020.03.173
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发表时间：
2020
影响因子：
5.2
通讯作者：
Ishihara Keiichi N.
中科院分区：
文献类型：
--
作者：
Machda Fahmi;Ogawa Takaya;Okumura Hideyuki;Ishihara Keiichi N.
比较了在硬玻片上沉积al掺杂ZnO （AZO）透明电极和附着在聚碳酸酯（PI-tape/PC）衬底上的柔性聚酰亚胺胶带的耐用性。为了确定合适的溅射结构，首先在室温（RT）下，在90 sccm的氩气和3 sccm的氧气条件下，以83 ~ 90 W的射频功率，在30分钟的时间内，通过反应性射频磁控溅射将AZO薄膜沉积在玻璃基板上。当沉积时，只有85 W射频功率的溅射配置才能产生具有可接受的透明电极光电性能的AZO薄膜：平均视觉透明度为80%，厚度为1.1 μm时为10 Ω/□。在85W的射频功率下溅射30分钟，基片表面温度从RT上升到88℃，这种配置在玻璃和PI-tape/PC基片上都成功地实现了AZO膜沉积。在85°C和85%相对湿度（RH）下暴露25天的湿热（DH）测试后，PI-tape/PC基板上的AZO薄膜的导电性明显下降：薄膜上可见许多裂纹，显着降低了霍尔迁移率。相反，沉积在玻璃基板上的薄膜表现出持久的高导电性，无裂纹和良好的霍尔迁移率稳定性。尽管在霍尔迁移率演化上存在显著差异，但两种衬底上的薄膜显示出相似的载流子浓度轻微下降的模式，这表明广泛报道的化学特性是AZO薄膜DH降解的关键，但在低温反应溅射低氧氩气比制备AZO薄膜的耐久性研究中较少涉及。
Durability performances are compared for Al-doped ZnO (AZO) transparent electrodes deposited on hard slide-glass and flexible polyimide-tape attached to polycarbonate (PI-tape/PC) substrates. To identify the appropriate sputtering configuration, the AZO thin films are first deposited on the glass substrates via reactive RF-magnetron sputtering under 90 sccm of argon gas and 3 sccm of oxygen gas at room temperature (RT) with 83 to 90 W of RF power for 30 min. When deposited, only the sputtering configuration with 85 W of RF power could produce the AZO films with acceptable optoelectrical properties for transparent electrodes: 80% average visual transparency and 10 Ω/□ at the thickness of 1.1 μm. The temperature at the surface of the substrates rises from RT to 88 °C due to the sputtering with 85W of RF power for 30 min, and this configuration is successfully conducted for AZO film depositions on both the glass and PI-tape/PC substrates. After exposure to a damp-heat (DH) test at 85 °C and 85% relative humidity (RH) for 25 days, the conductivity of the AZO films on the PI-tape/PC substrates is significantly degraded: many cracks are visible on the films, significantly decreasing the Hall mobility. Conversely, the films deposited on the glass substrates exhibit durable high conductivity, no cracks, and excellent stability of the Hall mobility. Despite this significant difference in Hall mobility evolution, the films on both substrates show similar patterns of a slight decrease in carrier concentrations, suggesting that chemical characteristics, extensively reported as the key for the DH degradation of AZO films, are less involved in this durability study featuring AZO films prepared via a low oxygen-to-argon gas ratio of reactive sputtering at low temperatures.
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