Observation of reentrant phases induced by short-range disorder in the lowest Landau level of Al{x}Ga{1-x}As/Al{0.32}Ga{0.68}as heterostructures.
Observation of reentrant phases induced by short-range disorder in the lowest Landau level of Al{x}Ga{1-x}As/Al{0.32}Ga{0.68}as heterostructures.
复制标题
观察 Al{x}Ga{1-x}As/Al{0.32}Ga{0.68} 异质结构最低朗道能级中短程无序诱导的重入相。
作者：
Wanli Li;D. Luhman;D. Tsui;L. Pfeiffer;K. West
本文报道了在Al{x}Ga{1-x}As/Al{0.32}Ga{0.68}As（x= 0.85%）异质结构样品中，在填充因子为2/3和3/5的最低朗道能级上观察到的重入量子霍尔效应。在填充因子为2/5和1/3之间也观察到一个重入绝缘相，表明这些相之间存在粒子-空穴对称性。具有x=0.21%的样品显示出弱得多的重入特征，表明由于导电通道中的Al合金而增加的短程散射有助于形成这些相。
We report the observation of a reentrant quantum Hall effect in the lowest Landau level between filling factors of 2/3 and 3/5 in a Al{x}Ga{1-x}As/Al{0.32}Ga{0.68}As heterostructure sample with x=0.85%. A reentrant insulating phase is also observed between filling factors of 2/5 and 1/3, demonstrating particle-hole symmetry between these phases. A sample with x=0.21% shows much weaker reentrant features, indicating that increased short-range scattering, due to the Al alloy in the conduction channel, aids in the formation of these phases.