(Invited) Thermoelectric Properties of Tin-Incorporated Group-IV Thin Films
(Invited) Thermoelectric Properties of Tin-Incorporated Group-IV Thin Films
复制标题
（特邀）含锡IV族薄膜的热电性能
DOI：
10.1149/10404.0183ecst
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Nakatsuka Osamu
中科院分区：
文献类型：
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作者：
Kurosawa Masashi;Nakatsuka Osamu
本文研究了锗锡（Ge1−xSnx）二元合金薄膜在实现低品位热电能量收集方面的新应用，即薄膜热电发生器（TEG）。为了在实验上阐明Ge1 - xSnx在TEG应用中的潜力，需要选择高电阻率晶圆作为Ge1 - xSnx生长的衬底，以隔离衬底的电。具体来说，本文在FZ-Si、半绝缘GaAs和InP衬底上进行了Ge1−xSnx的晶体生长。本文将从实验和理论两方面讨论Ge1−xSnx中Sn含量和晶体倾斜对导热系数的影响。我们还展示了器件尺寸在功率密度方面的缩放优点。
We investigate a new application of germanium tin (Ge1− xSnx) binary alloy thin films to realize energy harvesting of low-grade heat to electricity, ie, thin-film thermoelectric generator (TEG). To clarify the potential of Ge1− xSnx for the TEG application experimentally, it needs to choose high-resistivity wafers as the substrate for the Ge1− xSnx growth to isolate electrically from the substrates. Specifically, this paper conducts crystal growths of Ge1− xSnx on FZ-Si, semi-insulating GaAs, and InP substrates. The impacts of Sn content and crystallographic tilt in the Ge1− xSnx on the thermal conductivity will be discussed experimentally and theoretically. We also show the scaling merit of the device sizes in the power density.