Large low-frequency resistance noise in chemical vapor deposited graphene

Large low-frequency resistance noise in chemical vapor deposited graphene
复制标题

化学气相沉积石墨烯中低频电阻噪声较大

DOI：
--
复制
发表时间：
2010
期刊：
影响因子：
--
通讯作者：
A. Ghosh
A. Ghosh
中科院分区：
--
文献类型：
--
作者：
A. N. Pal;A. Bol;A. Ghosh

文献摘要

被引文献

相似文献

我们报告了对通过铜箔上的化学气相沉积 (CVD) 获得的 Si/SiO2 基板上的单层石墨烯薄膜的电阻噪声的详细研究。我们发现这些系统中的噪声相当大，当用唯象Hooge方程的形式表达时，它对应的Hooge参数高达0.1-0.5。我们还发现噪声幅度随栅极电压（或载流子密度）和温度的变化非常弱，这也与其他形式的石墨烯（尤其是剥离产生的石墨烯）中的噪声行为不同。
We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO2 substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when expressed in the form of phenomenological Hooge equation, it corresponds to Hooge parameter as large as 0.1–0.5. We also find the variation in the noise magnitude with the gate voltage (or carrier density) and temperature to be surprisingly weak, which is also unlike the behavior of noise in other forms of graphene, in particular those from exfoliation.