3C-SiC Transistor With Ohmic Contacts Defined at Room Temperature
3C-SiC Transistor With Ohmic Contacts Defined at Room Temperature
复制标题
具有室温下定义的欧姆接触的 3C-SiC 晶体管
DOI：
10.1109/led.2016.2593771
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发表时间：
2016
影响因子：
4.9
通讯作者：
P. Mawby
中科院分区：
文献类型：
--
作者：
Fan Li;Y. Sharma;D. Walker;S. Hindmarsh;M. Jennings;D. Martin;C. Fisher;P. Gammon;A. Pérez‐Tomás;P. Mawby
在所有的碳化硅多型体中，只有3C-碳化硅具有立方结构，并且可以在大面积的硅衬底上异质外延生长，这为制备廉价的宽禁带功率器件提供了一种选择。本文介绍了一种低阻(~3×10~(-5)Ω·cm~2)欧姆接触，这种接触是通过在n型3C-碳化硅上直接沉积一层Ti/Ni金属叠层而形成的。首次制备了具有原生欧姆接触的3C-SiC横向MOSFET，不仅欧姆接触没有界面空洞，而且获得了比退火器件更高的场效应迁移率(~80cm2/V·S)。
Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. Here, we present a low resistivity (~3 × 10-5 Ω · cm2) ohmic contact formed by directly depositing a Ti/Ni metal stack on n-type 3C-SiC without any extra annealing. For the first time, 3C-SiC lateral MOSFETs with asdeposited ohmic contacts were fabricated, and it turned out not only the ohmic contact is free from any interface voids, but also a higher field-effect mobility value (~80 cm2/V · s) was achieved compared with the annealed devices.