High breakdown voltage AlGaN-GaNHEMTs achieved by multiple field plates
High breakdown voltage AlGaN-GaNHEMTs achieved by multiple field plates
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DOI：
10.1109/led.2004.824845
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发表时间：
2004-04-01
影响因子：
4.9
通讯作者：
Mishra, UK
中科院分区：
文献类型：
--
作者：
Xing, HL;Dora, Y;Mishra, UK
采用多层场板技术制备了高压Al 0. 22 Ga 0. 78 N-GaN高电子迁移率晶体管。器件的击穿电压随着场板的增加而增加。具有两个场板的器件显示出高达900 V的击穿电压。基于标准平面晶体管制造，该技术易于应用，并且对于功率开关应用特别有吸引力。
High-voltage Al0.22Ga0.78N-GaN high-electron mobility transistors have been fabricated using multiple field plates over dielectric passivation layers. The device breakdown voltage was found to increase with the addition of the field plates. with two field plates, the device showed, a breakdown voltage as high as 900 V. This technique is easy to apply, based on the standard planar transistor fabrication, and especially attractive for the power switching applications.