Observation of spatial distribution of vacancy defects in semiconductor by positron microscope and electron beam induced current measurement
Observation of spatial distribution of vacancy defects in semiconductor by positron microscope and electron beam induced current measurement
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正电子显微镜和电子束感应电流测量观察半导体空位缺陷的空间分布
DOI：
10.1088/1742-6596/443/1/012041
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
M. Maekawa and A Kawasuso
中科院分区：
文献类型：
--
作者：
西山嘉男;成島哲也;井村考平;岡本裕巳;M. Maekawa and A Kawasuso
用扫描正电子显微镜（SPM）和电子束感生电流（EBIC）方法对同一样品在同一腔室中进行了硅衬底中空位缺陷的互补研究。发现在含有离子注入引入的空位缺陷的区域中，S参数和EBIC对比度都得到增强。也就是说，SPM提供了EBIC方法的空间分辨载流子复合中心是否源自空位缺陷的标准。
A complementary study of vacancy defects in Si substrates by using scanning positron microscope (SPM) and electron beam induced current (EBIC) method were demonstrated for the same samples and in the same chamber. Both the S parameter and EBIC contrast were found to be enhanced in the regions containing vacancy defects introduced by ion implantation. That is, the SPM provides a criterion if the spatially resolved carrier recombination centres by the EBIC method are originating from vacancy defects or not.