Hall mobility of undoped n-type conducting strontium titanate single crystals between 19 K and 1373 K
Hall mobility of undoped n-type conducting strontium titanate single crystals between 19 K and 1373 K
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DOI：
10.1007/bf01540113
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发表时间：
1995-09
期刊：
影响因子：
--
通讯作者：
R. Moos;W. Menesklou;K. Härdtl
中科院分区：
文献类型：
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作者：
R. Moos;W. Menesklou;K. Härdtl
在19 ~ 1373 K温度范围内研究了未掺杂的n型导电SrTiO 3单晶的霍尔迁移率。场计算用于估计样品形状和电极几何形状对测量值的影响。在19 ~ 353 K之间，在还原条件下淬火的样品在低温和高载流子浓度下表现出杂质散射行为，在室温下表现出声子散射机制。在此温度范围内，没有发现载流子密度依赖的迁移率，结合再氧化前后质量差的测量，可以确定氧缺陷和氧空位浓度。氧空位被证明是单电离的。在873 K以上，首次测定了霍尔迁移率和载流子浓度与氧分压和温度的关系。在此温度范围内，迁移率不依赖于载流子浓度，但显示出T-1.5依赖性。
The Hall mobility of undoped n-type conducting SrTiO3single crystals was investigated in a temperature range between 19 and 1373 K. Field calculations were used to estimate the influence of sample shape and electrode geometry on the measured values. Between 19 and 353 K samples, which were quenched under reducing conditions, show an impurity scattering behavior at low temperature and high carrier concentrations and a phonon scattering mechanism at room temperature. In this temperature region, no carrier-density-dependent mobility was found. In conjunction with measurements of the mass difference before and after reoxidation, the oxygen deficiency and the oxygen vacancy concentration could be determined. The oxygen vacancies proved to be singly ionized. Above 873 K, Hall mobility and carrier concentration had been determined as a function of both oxygen partial pressure and temperature for the first time. In this temperature range the mobility does not depend on carrier concentration, but shows aT−1.5dependence.