Room-temperature demonstration of integrated silicon single-electron transistor circuits for current switching and analog pattern matching
Room-temperature demonstration of integrated silicon single-electron transistor circuits for current switching and analog pattern matching
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DOI：
10.1109/iedm.2004.1419104
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发表时间：
2004-12
期刊：
影响因子：
--
通讯作者：
M. Saitoh;H. Harata;T. Hiramoto
中科院分区：
文献类型：
--
作者：
M. Saitoh;H. Harata;T. Hiramoto
本文报道了集成单电子晶体管(SET)电路的首次室温(RT)工作。我们制作了高可控性的硅单孔晶体管(SHTs)，获得了峰谷电流比(PVCR)大于10/sup3/at RT的大库仑阻塞(CB)振荡。在RT中演示了一种使用集成在单个栅下的两个SHTs的电流开关。提出了一种超紧凑模拟模式匹配电路SHTS的新应用。它的基本工作原理是在一个芯片上制作三个SHTs，通过向嵌入在SHTs栅氧化物中的纳米晶体中注入空穴来适当地控制CB峰的位置和电流。
This paper reports the first room-temperature (RT) operation of integrated single-electron transistor (SET) circuits. We fabricate silicon single-hole transistors (SHTs) with high controllability and obtain large Coulomb blockade (CB) oscillation with the peak-to-valley current ratio (PVCR) of over 10/sup 3/ at RT. A current switch using two SHTs integrated under a single gate is demonstrated at RT. We propose a novel application of SHTs, an ultra-compact analog pattern matching circuit. Its basic operation is demonstrated at RT using three SHTs fabricated on one chip, whose CB peak positions and currents are properly controlled by hole injection into nanocrystals embedded in the gate oxide of SHTs.