Precise Modeling Framework for Short-Channel Double-Gate and Gate-All-Around MOSFETs
Precise Modeling Framework for Short-Channel Double-Gate and Gate-All-Around MOSFETs
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DOI：
10.1109/ted.2008.2003221
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发表时间：
2008-10-01
影响因子：
3.1
通讯作者：
Iniguez, Benjamin
中科院分区：
文献类型：
--
作者：
Borli, Hakon;Kolberg, Sigbjorn;Iniguez, Benjamin
提出了短沟道纳米双栅和环栅MOSFET的精确建模框架。对于DG MOSFET，建模是基于共形映射分析所产生的电极间电容耦合，结合一个自洽的程序，包括反相电荷的影响，在设备体内的电位分布。DG极间耦合，这占主导地位的亚阈值行为的设备，也可以应用到一个高精度的圆柱形GAA MOSFET通过执行一个简单的几何缩放变换，占在两个设备中的栅极控制的差异。近阈值，自洽的程序调用泊松方程结合边界条件和合适的建模表达式的潜力被施加到这两个设备。在强反转中，这些解收敛到相应长沟道器件的解。作为自洽处理的一部分，计算漏极电流。静电和电流的结果是在良好的协议与数值模拟。
A precise modeling framework for short-channel nanoscale double-gate (DG) and gate-all-around (GAA) MOSFETs is presented. For the DG MOSFET, the modeling is based on a conformal mapping analysis of the potential distribution in the device body arising from the interelectrode capacitive coupling, combined with a self-consistent procedure to include the effects of the inversion charge. The DG interelectrode coupling, which dominates the subthreshold behavior of the device, can also be applied with a high degree of precision to the cylindrical GAA MOSFET by performing a simple geometric scaling transformation to account for the difference in gate control in the two devices. Near threshold, self-consistent procedures invoking Poisson's equation in combination with boundary conditions and suitable modeling expressions for the potential are applied to the two devices. In strong inversion, these solutions converge to those of the respective long-channel devices. The drain current is calculated as part of the self-consistent treatment. The results for both the electrostatics and the current are in excellent agreement with numerical simulations.