Radiation damage in p-type silicon irradiated with neutrons and protons

Radiation damage in p-type silicon irradiated with neutrons and protons
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DOI：
10.1016/j.nima.2008.11.007
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发表时间：
2009-02-01
期刊：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
影响因子：
1.4
通讯作者：
Zavrtanik, Marko
Zavrtanik, Marko
中科院分区：
物理与天体物理3区
文献类型：
--
作者：
Cindro, Vladimir;Kramberger, Gregor;Zavrtanik, Marko

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在高电阻率标准、氧化和磁性直拉p型材料上制造的二极管，用反应堆中子和24 GeV/c质子LIP辐照到等效通量Phi（eq）=3 x 10（14）Cm（-2）。在20 ℃下测量了辐射对有效捕获时间、有效掺杂剂浓度和漏电流的影响。在20和60 ℃下进行缺陷的退火。(C)2008 Elsevier B. V.保留所有权利。
Diodes fabricated on high resistivity standard, oxygenated and magnetic Czochralski p-type materials irradiated with reactor neutrons and 24GeV/c protons LIP to an equivalent fluence of Phi(eq)=3 x 10(14) Cm(-2). Radiation effects on effective trapping times, effective dopant concentration and leakage Current were measured at 20 degrees C. Annealing of defects was performed at 20 and 60 degrees C. (C) 2008 Elsevier B.V. All rights reserved.