Density and Thermal Conductivity Measurements for Silicon Melt by Electromagnetic Levitation under a Static Magnetic Field
Density and Thermal Conductivity Measurements for Silicon Melt by Electromagnetic Levitation under a Static Magnetic Field
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DOI：
10.1007/s10765-007-0160-8
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发表时间：
2007-02
影响因子：
2.2
通讯作者：
Y. Inatomi;F. Onishi;K. Nagashio;K. Kuribayashi
中科院分区：
文献类型：
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作者：
Y. Inatomi;F. Onishi;K. Nagashio;K. Kuribayashi
在均匀静态磁场下，通过非接触技术结合电磁悬浮 (EML) 在包括过冷状态在内的较宽温度范围内测量高纯硅熔体的密度和导热率。硅的最大过冷度 320 K 由样品中的残留杂质控制，而不是由熔体运动或材料污染控制。测量密度的温度依赖性显示出与温度的线性关系：ρ(T) = 2.51 × 103−0.271(T−Tm) kg·m−3，对于 1367 K <T< 1767 K，其中 T 是硅的熔点。采用CO2激光周期性加热方法测量硅熔体的热导率。测得的熔体热导率与维德曼-弗朗茨定律估计的值大致一致。
The density and thermal conductivity of a high-purity silicon melt were measured over a wide temperature range including the undercooled regime by non-contact techniques accompanied with electromagnetic levitation (EML) under a homogeneous and static magnetic field. The maximum undercooling of 320 K for silicon was controlled by the residual impurity in the specimen, not by the melt motion or by contamination of the material. The temperature dependence of the measured density showed a linear relation for temperature as: ρ(T) = 2.51 × 103−0.271(T−Tm) kg · m−3for 1367 K <T< 1767 K, whereTmis the melting point of silicon. A periodic heating method with a CO2laser was adopted for the thermal conductivity measurement of the silicon melt. The measured thermal conductivity of the melt agreed roughly with values estimated by a Wiedemann–Franz law.