Site-controlled photoluminescence at telecommunication wavelength from InAs/InP quantum dots
Site-controlled photoluminescence at telecommunication wavelength from InAs/InP quantum dots
复制标题
DOI：
10.1063/1.1887826
复制
发表时间：
2005-03-14
影响因子：
4
通讯作者：
Sakuma, Y
中科院分区：
文献类型：
--
作者：
Song, HZ;Usuki, T;Sakuma, Y
我们利用原子力微观氧化、湿法蚀刻和金属有机化学气相沉积再生长制造了有序的 InAs/InP 量子点 (QD) 阵列。量子点在 1.22 至 1.45 μm 的波长范围内表现出单点光致发光峰值，大部分与光纤的电信波段匹配。单峰的位点依赖性表明单点光发射器的位点可控性，这可能在量子信息处理中有用。 (C) 2005 年美国物理研究所。
We fabricated ordered InAs/InP quantum-dot (QD) arrays using atomic-force-microscopic oxidation, wet etching, and regrowth by metalorganic chemical vapor deposition. The QDs exhibit single-dot photoluminescence peaking at wavelengths ranging from 1.22 to 1.45 mu m, mostly matching the telecommunication band of optical fibers. The site dependence of single peaks indicates the site controllability of single-dot light emitters, which might be useful in quantum information processing. (C) 2005 American Institute of Physics.