Epitaxial PLZT waveguide technologies for integrated photonics
Epitaxial PLZT waveguide technologies for integrated photonics
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用于集成光子学的外延 PLZT 波导技术
DOI：
10.1117/12.589407
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
K. Nashimoto
中科院分区：
文献类型：
--
作者：
K. Nashimoto
为了将各种光子功能和/或多个通道集成到一个芯片中，已经开发了(Pb,La)(Zr,Ti)O3 (PLZT)波导技术。由于其高效的电压诱导折射率变化和高折射率，PLZT 是密集集成和器件小型化方面的最佳候选材料之一。我们建立了固相外延来生长低损耗 PLZT 薄膜波导，因为使用典型的气相生长技术很难形成低光学传播损耗 PLZT 波导。具有 PLZT 缓冲层的 PLZT 波导生长在 Nb 掺杂半导体 SrTiO3 衬底上，以实现光场和电场的有效重叠积分。通过在顶部电极和基板之间施加电压来实现对波导中耦合的光的有效控制，从而诱导 PLZT 波导的优异电光特性。此外，作为各种集成器件的关键元件的光开关器件被制造在PLZT波导中，呈现出低电压驱动和超快响应的特性。还讨论了进一步的关键发展，例如针对集成光子学的矩阵开关、开关-VOA 阵列和调制器阵列。
In order to integrate various photonic functions and/or many channels into one chip, (Pb,La)(Zr,Ti)O3 (PLZT) waveguide technologies have been developed. PLZT is one of the best candidates in terms of dense integration and device miniaturization due to its efficient voltage-induced index change and high refractive index. We have established a solid-phase epitaxy to grow low-loss PLZT thin film waveguides, since the formation of low optical propagation loss PLZT waveguides had been difficult with typical vapor phase growth techniques. PLZT waveguides with PLZT buffer layers are grown on Nb-doped semiconductive SrTiO3 substrates for the effective overlap integral of the optical field and the electric field. Efficient control of light coupled in the waveguides is achieved by applying voltage between the top electrodes and the substrates to induce the excellent electro-optic properties of PLZT waveguides. In addition, optical switching devices, which are the key elements of various integrated devices, are fabricated in the PLZT waveguides, showing low-voltage drive and ultra-fast response characteristics. Further key developments such as matrix switches, switch-VOA arrays, and modulator arrays directed toward integrated photonics are also discussed.