Silicon substrates with buried distributed Bragg reflectors for resonant cavity-enhanced optoelectronics
Silicon substrates with buried distributed Bragg reflectors for resonant cavity-enhanced optoelectronics
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DOI：
10.1109/jstqe.2002.801692
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发表时间：
2002-07-01
影响因子：
4.9
通讯作者：
Ünlü, MS
中科院分区：
文献类型：
--
作者：
Emsley, MK;Dosunmu, O;Ünlü, MS
我们报道了一种具有高反射率埋地分布布拉格反射器（DBR）的商业可重复硅片。衬底由采用双绝缘体上硅（SOI）工艺制造的两周期DBR组成。埋置DBR提供90%的反射面。我们制作了谐振腔增强硅光电探测器，在860nm处量子效率为40%，半宽为29ps，适用于10gbps的数据通信。我们还实现了具有90%反射率的双soi衬底，覆盖1300和1550 nm，用于硅基光电子学。
We report on a commercially reproducible silicon wafer with a high-reflectance buried distributed Bragg reflector (DBR). The substrate consists of a two-period DBR fabricated using a double silicon-on-insulator (SOI) process. The buried DBR provides a 90% reflecting surface. We have fabricated resonant cavity-enhanced Si photodetectors with 40% quantum efficiency at 860 nm and a full-width at half-maximum of 29 ps suitable for 10 Gbps data communications. We have also implemented double-SOI substrates with 90% reflectivity covering 1300 and 1550 nm for use in Si-based optoelectronics.