Obtaining High Localized Spin Magnetic Moments by Fluorination of Reduced Graphene Oxide
Obtaining High Localized Spin Magnetic Moments by Fluorination of Reduced Graphene Oxide
复制标题
通过还原氧化石墨烯的氟化获得高局域自旋磁矩
DOI：
10.1021/nn4027905
复制
发表时间：
2013-08-01
期刊：
影响因子：
17.1
通讯作者：
Du, Youwei
中科院分区：
文献类型：
--
作者：
Feng, Qian;Tang, Nujiang;Du, Youwei
Fluorination was confirmed to be the most effective route to introduce localized spins in graphene. However, adatoms clustering in perfect graphene lead to a low efficiency. In this study, we report experimental evidence of the generation of localized spin magnetic moments on defective graphene (reduced graphene oxide) through fluorination. More interstingly, the result shows that defects help increase the efficiency of the fluorination with regard to the density of magnetic moments created. Fluorinated reduced graphene oxide can have a high magnetic moment of 3.187 x 10(-3) mu(B) per carbon atom and a high efficiency of 8.68 x 10(-3) mu(B) per F atom. It may be attributed to the many vacancies, which hinder the clustering of F atoms, and introduce many magnetic edge adatoms.
