Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes
Comparing leakage currents and dark count rates in Geiger-mode avalanche photodiodes
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DOI：
10.1063/1.1483119
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发表时间：
2002-06-03
影响因子：
4
通讯作者：
Morrison, AP
中科院分区：
文献类型：
--
作者：
Jackson, JC;Hurley, PK;Morrison, AP
本文介绍了盖革模式雪崩光电二极管（GM APD）暗计数率和漏电流的实验研究。圆形二极管在一定范围内（20-500微米直径）的实验结果显示，泄漏电流水平比黑暗计数率预期的要高几个数量级。对泄漏电流的面积和外围元件的测量表明，反向偏置的大部分电流不会进入二极管的高场区域，因此不会导致暗计数率。从大面积器件（500 μ m）中提取的区域漏电流项与在较小器件（20 μ m）上测量的暗计数率很好地对应。最后，该工作表明了暗计数测量值如何代表GM apd中10(-18)A水平的泄漏电流检测。(C) 2002年美国物理研究所。
This letter presents an experimental study of dark count rates and leakage current in Geiger-mode avalanche photodiodes (GM APD). Experimental results from circular diodes over a range of areas (20-500 mum diam), exhibit leakage current levels orders of magnitude higher than anticipated from dark count rates. Measurements of the area and peripheral components of the leakage current indicate that the majority of the current in reverse bias does not enter the high-field region of the diode, and therefore, does not contribute to the dark count rate. Extraction of the area leakage current term from large-area devices (500 mum) corresponds well with the measured dark count rates on smaller devices (20 mum). Finally, the work indicates how dark count measurements represent 10(-18) A levels of leakage current detection in GM APDs. (C) 2002 American Institute of Physics.