Optimizing MOM diode performance via the oxidation technique
Optimizing MOM diode performance via the oxidation technique
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通过氧化技术优化 MOM 二极管性能
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
A. Gallant
中科院分区：
文献类型：
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作者：
L. Dodd;D. Wood;A. Gallant
本工作提出了一种简单的氧化技术对Ti/TiOx/Pt双金属（金属氧化物金属）二极管的电性能的影响的研究。已经设计了制造工艺以生产具有高产率的器件。I-V特性显示出良好的二极管行为：随后的数学分析，以提取曲率系数和零偏置电阻的关键参数，证明这些数字如何取决于曲线拟合方法。然而，高曲率二极管（通常为5.5 V−1无偏置，15 V−1偏置）代表了迄今为止最好的结果。通过AFM和RBS分析获得了来自结构的补充物理信息。
This work presents a study of the effect of a simple oxidation technique on the electrical performance of Ti/TiOx/Pt MOM (metal-oxide-metal) diodes. A fabrication process has been designed to produce devices with a high yield. The I–V characteristics show good diode behavior: subsequent mathematical analysis to extract the key parameters of curvature coefficient and resistance at zero bias demonstrate how these numbers depend on the curve fitting method. Nevertheless, diodes with high curvature (typically 5.5 V−1 unbiased, 15 V−1 biased) represent results among the best to date. Complimentary physical information from the structures has been obtained via AFM and RBS analysis.