Colloquium : Persistent spin textures in semiconductor nanostructures
Colloquium : Persistent spin textures in semiconductor nanostructures
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DOI：
10.1103/revmodphys.89.011001
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发表时间：
2016-04
影响因子：
44.1
通讯作者：
J. Schliemann
中科院分区：
文献类型：
--
作者：
J. Schliemann
半导体自旋电子学中的器件概念使得长自旋寿命成为人们所期望的，而通过量子信息处理方案对自旋控制的要求甚至更高。不幸的是，由于自旋轨道耦合，半导体中的电子自旋通常会发生相当快的退相干。然而，在由闪锌矿半导体制成的二维量子阱中，自旋轨道相互作用可以通过这样的方式进行设计，即使存在无序和缺陷，也能产生具有极长自旋寿命的持久自旋结构。我们回顾了该主题的 n 掺杂和 p 掺杂结构的实验和理论进展，并讨论了可能的器件应用。
Device concepts in semiconductor spintronics make long spin lifetimes desirable, and the requirements put on spin control by schemes of quantum information processing are even more demanding. Unfortunately, due to spin-orbit coupling electron spins in semiconductors are generically subject to rather fast decoherence. In two-dimensional quantum wells made of zinc-blende semiconductors, however, the spin-orbit interaction can be engineered in such a way that persistent spin structures with extraordinarily long spin lifetimes arise even in the presence of disorder and imperfections. We review experimental and theoretical developments on this subject both for n-doped and p-doped structures, and we discuss possible device applications.