Giant Dielectric Constant of Hexagonal BaTiO3 Crystal Grown by Containerless Processing
Giant Dielectric Constant of Hexagonal BaTiO3 Crystal Grown by Containerless Processing
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DOI：
10.1021/cm0487526
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发表时间：
2004-09
影响因子：
8.6
通讯作者：
Jianding Yu;P. Paradis;T. Ishikawa;S. Yoda;Y. Saita;M. Itoh;F. Kano
中科院分区：
文献类型：
--
作者：
Jianding Yu;P. Paradis;T. Ishikawa;S. Yoda;Y. Saita;M. Itoh;F. Kano
非接触法合成的缺氧h-BaTiO_3的介电常数高于100 000，损耗分量约为0.1，介电常数在100~300K范围内与温度的关系很弱，介电常数在70K以下急剧下降2个数量级。
Oxygen-deficient h-BaTiO3 synthesized by noncontact processing exhibits a dielectric constant higher than 100 000 with a loss component of about 0.1 together with a weak temperature dependence in the range of 100 to 300 K. Dielectric constant dramatically dropped by 2 orders of magnitude below 70 K.