Piezoelectrically induced resistance modulations in La0.7Sr0.3MnO3∕Pb(Zr,Ti)O3 field effect devices
Piezoelectrically induced resistance modulations in La0.7Sr0.3MnO3∕Pb(Zr,Ti)O3 field effect devices
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DOI：
10.1063/1.2108129
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发表时间：
2005-10
影响因子：
4
通讯作者：
C. Thiele;K. Dörr;L. Schultz;E. Beyreuther;W. Lin
中科院分区：
文献类型：
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作者：
C. Thiele;K. Dörr;L. Schultz;E. Beyreuther;W. Lin
具有窄锰酸盐通道（⩽7nm）的PbZr0.52Ti0.48O3∕La0.7Sr0.3MnO3（PZT∕LSMO）外延铁电 - 铁磁场效应器件呈现出蝶形滞后电阻调制（ΔR），这与PZT逆压电效应引起的应变变化相符。根据观察到的电阻滞后回线的类型，对于不同通道厚度的器件，已区分出电场效应和应变效应的贡献。应变诱导的ΔR随通道厚度增加而减小。在Sr掺杂量为30%的LSMO通道中，场效应引起的ΔR较低。
Epitaxial ferroelectric-ferromagnetic field effect devices of PbZr0.52Ti0.48O3∕La0.7Sr0.3MnO3 (PZT∕LSMO) with narrow manganite channels (⩽7nm) show butterflylike hysteretic resistance modulations (ΔR) which are commensurate with strain variation from inverse piezoelectric effect of PZT. Based on the type of observed resistance hysteresis loops, contributions from electric field effect and strain effect have been distinguished for devices with varied channel thickness. The strain-induced ΔR decreases with increasing channel thickness. The ΔR from field effect is low in the LSMO channels with 30% Sr doping.