Facile pyrolytic synthesis of copper zinc tin sulfide thin films for efficient counter electrodes in quantum dot sensitized solar cells
Facile pyrolytic synthesis of copper zinc tin sulfide thin films for efficient counter electrodes in quantum dot sensitized solar cells
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DOI：
10.1016/j.matlet.2013.11.009
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发表时间：
2014-02
影响因子：
3
通讯作者：
X. Dai;Chengwu Shi;Yanru Zhang;Feng Liu;Xiaqin Fang;Jun Zhu
中科院分区：
文献类型：
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作者：
X. Dai;Chengwu Shi;Yanru Zhang;Feng Liu;Xiaqin Fang;Jun Zhu
Facile pyrolytic synthesis of copper zinc thin sulfide (Cu2ZnSnS4) thin films are first introduced into quantum dot sensitized solar cells (QDSCs) for the counter electrode. The pore size of the pyrolytic synthesis Cu2ZnSnS4thin films is from 100 nm to 300 nm, and its charge transfer resistance is 37.10 Ω. The assembled QDSCs with the pyrolytic synthesis Cu2ZnSnS4thin films give short circuit photocurrent density (Jsc) of 13.33 mA cm−2, open circuit voltage (Voc) of 0.52 V, and fill factor (FF) of 0.45, corresponding to the photoelectric conversion efficiency (η) of 3.14%, while the QDSCs with platinized conducting glass giveJscof 13.38 mA cm−2,Vocof 0.51 V, and FF of 0.34, corresponding to theηof 2.32%. Because the pyrolysis procedure is a facile, low cost and vacuum-free process, and has the advantage of obtaining various porous microstructure thin films and allowing deposition over large areas, the pyrolytic synthesis Cu2ZnSnS4thin films can be a promise alternative to the noble Pt counter electrode in QDSCs.
