InAsSb/InAsSbP light emitting diodes for the detection of CO and CO2 at room temperature
InAsSb/InAsSbP light emitting diodes for the detection of CO and CO2 at room temperature
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InAsSb/InAsSbP 发光二极管，用于室温下检测 CO 和 CO2
DOI：
10.1088/0022-3727/32/15/302
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
Y. Yakovlev
中科院分区：
文献类型：
--
作者：
H. Gao;A. Krier;V. Sherstnev;Y. Yakovlev
本报告描述了室温InAs0.89Sb0.11/InAs0.48Sb0.22P0.30半导体发光二极管的外延生长和制造，工作在近4.5µm的中红外波长区域。用于发光二极管有源区的InAs0.89Sb0.11三元材料与InAs衬底层有很大的晶格不匹配，为了适应这一点，有必要生长具有中间成分（InAs0.94Sb0.06）的缓冲层。该器件具有4.5µm的红外发射，可以有效地用作光学传感器的基础，用于各种应用中对4.6µm的一氧化碳和4.2µm的二氧化碳进行环境监测。
This report describes the epitaxial growth and fabrication of room-temperature InAs0.89Sb0.11/InAs0.48Sb0.22P0.30 semiconductor light emitting diodes operating in the mid-infrared wavelength region near 4.5 µm. The InAs0.89Sb0.11 ternary material used in the light emitting diode active region has a large lattice mismatch with respect to the InAs substrate layer and in order to accommodate this it was necessary to grow a buffer layer with an intermediate composition (InAs0.94Sb0.06). The devices exhibit infrared emission at 4.5 µm and could be effectively used as the basis of an optical sensor for the environmental monitoring of carbon monoxide at 4.6 µm and carbon dioxide at 4.2 µm in various applications.