Integer Quantum Hall Effect in Trilayer Graphene
Integer Quantum Hall Effect in Trilayer Graphene
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DOI：
10.1103/physrevlett.107.126806
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发表时间：
2011-09-16
影响因子：
8.6
通讯作者：
Raquet, B.
中科院分区：
文献类型：
--
作者：
Kumar, A.;Escoffier, W.;Raquet, B.
通过使用高磁场（高达60 T），我们观察到三层石墨烯中整数量子霍尔效应的令人信服的证据。的磁输运指纹是类似的石墨烯单层，除了在填充因子nu = 2的平台的情况下。在一个非常低的填充因子，霍尔电阻消失，由于混合的电子和空穴载流子的无序诱导的存在。采用自洽Hartree方法计算了朗道能级，并假设三层的ABC堆积顺序，理论上很好地再现了所测得的霍尔电阻率平台。
By using high-magnetic fields (up to 60 T), we observe compelling evidence of the integer quantum Hall effect in trilayer graphene. The magnetotransport fingerprints are similar to those of the graphene monolayer, except for the absence of a plateau at a filling factor of nu = 2. At a very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder. The measured Hall resistivity plateaus are well reproduced theoretically, using a self-consistent Hartree calculations of the Landau levels and assuming an ABC stacking order of the three layers.