John Bardeen and the Point‐Contact Transistor
John Bardeen and the Point‐Contact Transistor
复制标题
约翰·巴丁和点接触晶体管
DOI：
10.1063/1.881336
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发表时间：
1992
期刊：
影响因子：
3.5
通讯作者：
N. Holonyak
中科院分区：
文献类型：
--
作者：
N. Holonyak
直到今天，人们还不能很好地理解双极晶体管是从约翰·巴丁和沃尔特·H·布拉顿的点接触晶体管开始的。点接触晶体管的发明是一个重大事件，不仅是因为它本身，更是因为随之而来的电子革命是不可想象的。这场革命有始有终：巴丁对少数载流子注入的认识--也就是他意识到，外加电压会导致n型半导体材料表面靠近金属触点的价带空穴被注入到材料的主体中。这种认识使半导体突然变得重要起来，不再只是一个有趣的研究材料。
To this day it is not well understood that the bipolar transistor began with John Bardeen and Walter H. Brattain's point‐contact transistor. The invention of the point‐contact transistor was a momentous event, not only in itself but even more because of the unimaginable revolution in electronics that followed. This revolution, which continues unabated, had a beginning: Bardeen's recognition of minority‐carrier injection—that is, his realization that an applied voltage causes valence band holes from the surface region of an n‐type semiconductor material near a metal contact to be injected into the bulk of the material. This realization made the semiconductor suddenly important and no longer just an interesting material to study.