Optical modulation using the silicon platform
Optical modulation using the silicon platform
复制标题
使用硅平台的光调制
DOI：
10.1117/12.2005423
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Gardes F
中科院分区：
文献类型：
--
作者：
Gardes F
在过去的十年中，硅光调制器器件经历了巨大的改进，数据速率高达50 Gb/s，功耗极低，只有几个fJ/bit[1]。然而，存在对具有小覆盖区和消光比高于5dB的宽带特性的高速低功率器件的显著需求。在这里，我们描述的工作在英国硅光子学计划，这导致了新型纳米腔光学架构的制造和初步结果，以及自对准pn结结构嵌入在硅脊形波导的有效长度在毫米范围内产生高速光相位调制，同时保持高消光比。
Optical modulator devices in silicon have experienced dramatic improvements over the last decade, with data rates demonstrated up to 50Gb/s and ultra-lower power consumption with a few fJ/bit[1]. However a significant need exist for high speed low power devices with a small footprint and broadband characteristics with extinction ratio above 5dB. Here we describe the work within the UK silicon photonics program, which has led to the fabrication and preliminary results of novel nano cavity optical architecture as well as self-aligned pn junction structures embedded in a silicon rib waveguide with an active length in the millimetre range producing high-speed optical phase modulation whilst retaining a high extinction ratio.