Comprehensive Compact Models for the Circuit Simulation of Multichip Power Modules

Comprehensive Compact Models for the Circuit Simulation of Multichip Power Modules
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DOI:
10.1109/tpel.2009.2036728
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发表时间:
2010-05
影响因子:
6.7
通讯作者:
A. Castellazzi
A. Castellazzi
中科院分区:
工程技术1区
文献类型:
--
作者:
A. Castellazzi

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本文提出了一种封装半导体功率模块的模型开发,用于电路仿真环境。针对铁路牵引应用,它考虑了最先进的6.5 kV绝缘栅双极晶体管(IGBT)模块,考虑了IGBT和续流二极管的反并联连接,并包括与多芯片结构相关的所有主要的寄生效应和电磁效应。半导体物理的描述与自热效应相结合;与封装,布局和互连相关的电磁现象也被考虑在内。为了优化准确性和计算量之间的折衷,器件模型基于混合的物理和行为描述,并且可扩展以代表所需数量的并行器件,并允许根据需要引入寄生元件。电磁效应建模的等效集总元件,通过精确的3-D结构组件模型的数值模拟提取。瞬态热现象的描述依赖于有限差分法,该方法考虑使用基本上1-D集总等效模型和完全3-D分布式描述。该模型进行了验证静态和动态,对数据表信息和测量;选择的模拟例子证明了它的实用性和多功能性。虽然开发了一个特定的应用场景,所提出的方法是普遍的有效性。
This paper proposes the model development of a packaged semiconductor power module, for use in a circuit simulation environment. Focusing on railway traction applications, it considers a state-of-the-art 6.5 kV insulated gate bipolar transistor (IGBT) module, taking into account the antiparallel connection of IGBTs and free-wheeling diodes, and including all main electrothermal and electromagnetic effects associated with the multichip structure. The description of semiconductor physics is coupled with self-heating effects; electromagnetic phenomena associated with the packaging, layout, and interconnections are also taken into account. To optimize the compromise between accuracy and computational effort, the device models are based on a mixed physical and behavioral description, and are scalable to be representative of a desired number of parallel devices and to allow for the introduction of parasitic elements, as required. Electromagnetic effects are modeled by means of equivalent lumped elements, extracted by numerical simulation of an accurate 3-D structural assembly model. The description of transient thermal phenomena relies on a finite-difference approach that considers the use of both essentially 1-D lumped equivalent models and fully 3-D distributed description. The model is validated statically and dynamically, against both data-sheet information and measurements; a selection of simulation examples demonstrates its usefulness and versatility. Although developed for a specific application scenario, the proposed approach is of general validity.