Self-assembled KCu7S4 nanowire monolayers for self-powered near-infrared photodetectors
Self-assembled KCu7S4 nanowire monolayers for self-powered near-infrared photodetectors
复制标题
用于自供电近红外光电探测器的自组装 KCu7S4 纳米线单层
作者：
Wang You-Yi;Wu Ya-Dong;Peng Wei;Song Yong-Hong;Wang Bao;Wu Chun-Yan;Lu Yang
基于一维半导体纳米线的近红外光探测器由于其在多个领域的实际应用而引起了人们的极大兴趣。我们提出了一种简便而有效的方法，合理地集成KCu 7S 4半导体纳米线的LB技术。将KCu 7S 4纳米线紧密堆积在硅片表面，制备了一种自供电近红外光探测器。所制备的Si/KCu 7S 4异质结具有紧密堆积和良好排列的纳米线阵列，在近红外光照射下表现出出色的光伏性能，允许在不需要外部电源的情况下检测近红外光。该光电探测器对近红外光（980 nm，295.3 μW cm−2）具有高灵敏度，响应率（R）为15 mA W−1，探测率（D*）为2.15 × 1012 cm Hz 1/2 W−1。值得注意的是，该器件显示出在高达50 kHz的高脉冲光照射下工作的能力，具有高速响应（响应时间τr 7.4 μs和恢复时间τf 8.6 μs）。这有利于低成本和高速光电探测器和集成光电传感器电路的制造。
Near infrared light (NIR) photodetectors based on one-dimensional semiconductor nanowires have generated considerable interest due to their practical application in versatile fields. We present a facile yet efficient approach to rationally integrating KCu7S4 semiconductor nanowires by the Langmuir–Blodgett (LB) technique. A self-powered near infrared (NIR) light photodetector is fabricated by transferring a close-packed KCu7S4 nanowire monolayer to the surface of a silicon wafer. The as-fabricated Si/KCu7S4 heterojunction with a close-packed and well-aligned nanowire array exhibits splendid photovoltaic performance when illuminated by NIR light, allowing the detection of NIR light without an exterior power supply. The photodetector exhibits a high sensitivity to NIR light (980 nm, 295.3 μW cm−2) with responsivity (R) 15 mA W−1 and detectivity (D*) 2.15 × 1012 cm Hz1/2 W−1. Significantly, the device shows the capability to work under high pulsed light irradiation up to 50 kHz with a high-speed response (response time τr 7.4 μs and recovery time τf 8.6 μs). This facilitates the fabrication of low-cost and high-speed photodetectors and integrated optoelectronic sensor circuitry.