On the capacity of bounded rank modulation for flash memories
On the capacity of bounded rank modulation for flash memories
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DOI：
10.1109/isit.2009.5205972
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发表时间：
2009-06
期刊：
影响因子：
--
通讯作者：
Jehoshua Bruck;Anxiao Jiang;Zhiying Wang
中科院分区：
文献类型：
--
作者：
Jehoshua Bruck;Anxiao Jiang;Zhiying Wang
最近引入了等级调制作为闪存的新信息表示方案。给定一组闪存单元的电荷水平，排序用于引发排列，进而表示数据。由于较小的细胞组的排序复杂性较低，我们考虑有界秩调制，其中给定大小的排列序列用于表示数据。我们研究了在排列可以重叠以获得更高容量的情况下有界秩调制的容量。
Rank modulation has been recently introduced as a new information representation scheme for flash memories. Given the charge levels of a group of flash cells, sorting is used to induce a permutation, which in turn represents data. Motivated by the lower sorting complexity of smaller cell groups, we consider bounded rank modulation, where a sequence of permutations of given sizes are used to represent data. We study the capacity of bounded rank modulation under the condition that permutations can overlap for higher capacity.