XPS analyses of Ta/MgOx/Ni81Fe19/MgOx/Ta films
XPS analyses of Ta/MgOx/Ni81Fe19/MgOx/Ta films
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DOI：
10.1016/j.apsusc.2012.05.152
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发表时间：
2012-10
影响因子：
6.7
通讯作者：
Minghua Li;G. Han;Yang Liu;C. Feng;Haicheng Wang;J. Teng;Guang-Hua Yu
中科院分区：
文献类型：
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作者：
Minghua Li;G. Han;Yang Liu;C. Feng;Haicheng Wang;J. Teng;Guang-Hua Yu
采用磁控溅射技术制备了Ta/MgOx/Ni81Fe19/MgOx/Ta薄膜。退火后各向异性磁阻（AMR）急剧增加。采用X射线光电子能谱(XPS)分析了不同工艺条件下制备的NiFe/MgOx/Ta薄膜界面处Ta和MgOx的化学态。结果表明，薄膜的AMR与MgOx的化学态有关。不同工艺条件制备的氧化镁，镁的化学状态不同。因此，当 MgOx 薄膜中存在更多 Mg2+ 离子时，增加 AMR 是有益的。
Ta/MgOx/Ni81Fe19/MgOx/Ta films were prepared by magnetron sputtering. The anisotropic magnetoresistance (AMR) increases dramatically after annealing. The chemical states of Ta and MgOxat the interface of the NiFe/MgOx/Ta films, which were prepared at the different technological conditions, were analyzed by X-ray photoelectron spectroscopy (XPS). The results show that the AMR of the films is related to the chemical states of MgOx. The chemical states of Mg are different when MgOxis prepared at different technological conditions. Therefore, increasing the AMR is beneficial when more Mg2+ions are present in the MgOxfilms.