Polariton condensation in a strain-compensated planar microcavity with InGaAs quantum wells
Polariton condensation in a strain-compensated planar microcavity with InGaAs quantum wells
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DOI：
10.1063/1.4901814
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发表时间：
2014-11-10
影响因子：
4
通讯作者：
Lagoudakis, Pavlos G.
中科院分区：
文献类型：
--
作者：
Cilibrizzi, Pasquale;Askitopoulos, Alexis;Lagoudakis, Pavlos G.
目前，对极化子凝聚体中本征相互作用的研究受到半导体微腔结构的光子无序的限制。在这里，我们使用具有嵌入式 InGaAs 量子阱的应变补偿平面 GaAs/AlAs0.98P0.02 微腔来克服这个问题，该微腔具有减少的交叉影线无序性。使用非共振光激发下的实空间和倒易空间光谱成像，我们观察到极化子凝聚和标志着光子激光开始的第二阈值，即从强耦合状态到弱耦合状态的转变。具有抑制光子无序的结构中的凝聚是实现相互作用凝聚体的周期性晶格的必要步骤，为芯片上量子模拟提供了平台。 (C) 2014 AIP 出版有限责任公司。
The investigation of intrinsic interactions in polariton condensates is currently limited by the photonic disorder of semiconductor microcavity structures. Here, we use a strain compensated planar GaAs/AlAs0.98P0.02 microcavity with embedded InGaAs quantum wells having a reduced cross-hatch disorder to overcome this issue. Using real and reciprocal space spectroscopic imaging under non-resonant optical excitation, we observe polariton condensation and a second threshold marking the onset of photon lasing, i.e., the transition from the strong to the weak-coupling regime. Condensation in a structure with suppressed photonic disorder is a necessary step towards the implementation of periodic lattices of interacting condensates, providing a platform for on chip quantum simulations. (C) 2014 AIP Publishing LLC.