A 1.3-µm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
A 1.3-µm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
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寿命超过 1000 小时的 1.3 µm GaInNAs 激光二极管
DOI：
10.1143/jjap.38.l1355
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发表时间：
1999
影响因子：
1.5
通讯作者：
Toshiaki Tanaka
中科院分区：
文献类型：
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作者：
M. Kondow;T. Kitatani;K. Nakahara;Toshiaki Tanaka
1.3 µm 范围的 GaInNAs/GaAs 单量子阱激光器在 24°C、自动电流控制条件下进行了 1000 小时的测试。没有观察到降解。阈值电流略有下降（14%）。激光波长稳定。在高温（50°C）自动功率控制条件下不会出现快速退化，这表明具有实用寿命的可靠GaInNAs激光二极管可能很快就会实现。
A 1.3-µm-range GaInNAs/GaAs single-quantum-well laser was tested for 1000 hours at 24°C under an auto-current-control condition. No degradation was observed. The threshold current fell slightly (14%). The lasing wavelength was stable. The lack of rapid degradation under an auto-power-control condition at a high temperature (50°C) suggests that a reliable GaInNAs laser diode with a practical lifetime may soon be realized.
DOI：
10.1143/jjap.35.1273
发表时间：
1996-02-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
--
作者：
Kondow, M;Uomi, K;Yazawa, Y
通讯作者：
Yazawa, Y