Optical properties of rectangular cross-sectional ZnS nanowires
Optical properties of rectangular cross-sectional ZnS nanowires
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DOI：
10.1021/nl049169r
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发表时间：
2004-09-01
期刊：
影响因子：
10.8
通讯作者：
Eklund, PC
中科院分区：
文献类型：
--
作者：
Xiong, QH;Chen, G;Eklund, PC
用脉冲激光蒸发ZnS/10% Au靶，在Ar/5% H-2气流中合成了具有矩形截面（约50 × 50 nm（2））和几十微米长的ZnS半导体波导。高度结晶的纤维素纤维呈现纤锌矿结构，主要沿[001]或[100]方向沿着生长。室温下的光致发光显示出强的近边发光双峰（类似于3.75 eV和3.68 eV）和弱的缺陷发光结构，这归因于化学计量缺陷和可能的Au杂质。在室温下的光吸收（OA）显示出强烈的扩大的基本直接吸收边确定与化学计量缺陷。还观察到OA中的两个峰（3.75和3.85eV）。我们认为，在光致发光和光吸收（3.68，3.75，3.85 eV）的结构是从导带和价带的自旋轨道/晶体场分裂之间的直接跃迁。理论结果也表明，在ZnS纳米线的带隙的尺寸依赖性。
ZnS nanowaveguides with rectangular cross-section (similar to50 x 50 nm(2)) and tens of microns in length have been synthesized by pulsed laser vaporization of ZnS/10% Au targets in a flow of Ar/5% H-2. The highly crystalline filaments exhibit the wurtzite structure, growing mainly along the [001] or [100] directions. Photoluminescence at room temperature shows strong near-edge luminescence doublets (similar to3.75 eV and 3.68 eV) and a weak defect luminescence structure attributed to stoichiometric defects and possibly to Au impurities. Optical absorption (OA) at room temperature shows a strong broadening of the fundamental direct absorption edge identified with stoichometric defects. Two peaks (3.75 and 3.85 eV) in the OA are also observed. We believe that the structure in the photoluminescence and optical absorption (3.68, 3.75, 3.85 eV) are from direct transitions between the conduction band and the spin-orbit/crystal field splitting of the valance bands. Theoretical results are also presented that show the size-dependence of the band gap in ZnS nanowires.