Thermoelectric properties of single crystalline B4C prepared by a floating zone method
Thermoelectric properties of single crystalline B4C prepared by a floating zone method
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DOI：
10.2320/matertrans.42.1445
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发表时间：
2001-07-01
影响因子：
1.2
通讯作者：
Goto, T
中科院分区：
文献类型：
--
作者：
Gunjishima, I;Akashi, T;Goto, T
用浮区法制备了高纯度B4C单晶，尺寸为几厘米。在室温至1023 K范围内测量了材料的电导率、霍尔迁移率、塞贝克系数和导热系数。电导率约为烧结B4C的4倍。迁移率随温度升高而增加，表明载流子的跳变传导。塞贝克系数为240 ~ 260亩VK-1，几乎与温度无关。其导热系数约为烧结B4C的2倍。热电性能比也高于烧结B4C，在1100 K时为4.2 x 10(-5) K-1。
High-purity single crystalline B4C, several cm in size, has been prepared by a Floating Zone method. The electrical conductivity, Hall mobility, Seebeck coefficient and thermal conductivity are measured from room temperature to 1023 K. The electrical conductivity is about four times higher than that of sintered B4C. The mobility has increased with increasing temperature, indicating hopping conduction of charge carriers. The Seebeck coefficient is 240-260 mu VK-1, almost independent of temperature. The thermal conductivity is about twice higher than that of sintered B4C. The thermoelectric figure-of-merit is also higher than that of sintered B4C, being 4.2 x 10(-5) K-1 at 1100 K.