Observation of magnetism, low resistivity, and magnetoresistance in the near-surface region of Gd implanted ZnO
Observation of magnetism, low resistivity, and magnetoresistance in the near-surface region of Gd implanted ZnO
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DOI：
10.1063/1.4747525
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发表时间：
2012-08
影响因子：
4
通讯作者：
P. Murmu;J. Kennedy;G. Williams;B. Ruck;S. Granville;S. Chong
中科院分区：
文献类型：
--
作者：
P. Murmu;J. Kennedy;G. Williams;B. Ruck;S. Granville;S. Chong
Gd离子注入ZnO晶体在650 °C真空退火后观察到铁磁有序，发现它是本征的，并延伸到40 nm的深度。的铁磁顺序是不受Gd的浓度高达5%，并可能产生的缺陷集群。在低温下观察到磁电阻，这可能是由于缺陷团簇之间的自旋隧道效应或缺陷团簇界面处的自旋相关散射。Gd注入具有有利的效果，其中其导致mΩ cm的介电常数以及显著的电子掺杂。
Ferromagnetic order is observed in Gd ion implanted ZnO crystals after annealing at 650 °C in a vacuum and we find that it is intrinsic and extends to depths of up to 40 nm. The ferromagnetic order is not affected by Gd for concentrations as high as 5% and possibly arises from defect clusters. Magnetoresistance is observed at low temperatures that may be due to spin-tunnelling between the defect clusters or spin-dependent scattering at the defect cluster interfaces. Gd implantation has an advantageous effect where it results in mΩ cm resistivities as well as significant electron doping.