Low-temperature chemical vapor deposition growth of graphene films enabled by ultrathin alloy catalysts
Low-temperature chemical vapor deposition growth of graphene films enabled by ultrathin alloy catalysts
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DOI:
10.1116/1.5144692
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发表时间:
2020-05-01
影响因子:
1.4
通讯作者:
Jiao, Jun
中科院分区:
文献类型:
--
作者:
Olson, Samuel;Zietz, Otto;Jiao, Jun
This report introduces a method for fabricating graphene at low temperatures via chemical vapor deposition enabled by ultrathin (similar to 1nm) nickel-gold (Ni-Au) catalysts. The unique combination of high carbon (C) solubility Ni, low C solubility Au, and an ultrathin layer of a catalyst demonstrates the effectiveness to produce graphene at 450 degrees C with the layer number independent of growth duration. In contrast to grain-boundary defined catalyst morphology found in thicker (>20nm) metal catalysts, the ultrathin catalyst morphology leads to the formation of nanoscale metal "islands" during the growth process, which results in curved graphene covering the catalyst. To test the effect of preactivation of the ultrathin catalyst for the formation of graphene, a preanneal process of the catalyst followed by the introduction of a carbon precursor was also investigated. The preanneal process resulted in the formation of carbon nanotubes (CNTs) in lieu of graphene, displaying the impact of the catalytic surface treatment in relation to the produced materials. The results and discussion presented here detail a low-temperature nanoscale manufacturing process that allows for the production of either graphene or CNTs on an ultrathin catalyst.