Low-temperature chemical vapor deposition growth of graphene films enabled by ultrathin alloy catalysts

Low-temperature chemical vapor deposition growth of graphene films enabled by ultrathin alloy catalysts
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DOI:
10.1116/1.5144692
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发表时间:
2020-05-01
影响因子:
1.4
通讯作者:
Jiao, Jun
Jiao, Jun
中科院分区:
工程技术4区
文献类型:
--
作者:
Olson, Samuel;Zietz, Otto;Jiao, Jun

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本报告介绍了一种通过化学气相沉积在低温下制备石墨烯的方法,该方法通过纳米(类似于1nm)镍-金(Ni-Au)催化剂实现。高碳(C)溶解度Ni、低C溶解度Au和催化剂的石墨烯层的独特组合证明了在450 ℃下生产石墨烯的有效性,其中层数与生长持续时间无关。与在较厚(> 20nm)金属催化剂中发现的晶界限定的催化剂形态相反,石墨烯催化剂形态导致在生长过程中形成纳米级金属"岛",这导致弯曲的石墨烯覆盖催化剂。为了测试预活化催化剂对石墨烯形成的影响,还研究了催化剂的预退火过程,随后引入碳前体。预退火过程导致碳纳米管(CNT)代替石墨烯的形成,显示了催化表面处理对所生产材料的影响。本文中给出的结果和讨论详细描述了一种低温纳米级制造工艺,该工艺允许在石墨烯催化剂上生产石墨烯或CNT。
This report introduces a method for fabricating graphene at low temperatures via chemical vapor deposition enabled by ultrathin (similar to 1nm) nickel-gold (Ni-Au) catalysts. The unique combination of high carbon (C) solubility Ni, low C solubility Au, and an ultrathin layer of a catalyst demonstrates the effectiveness to produce graphene at 450 degrees C with the layer number independent of growth duration. In contrast to grain-boundary defined catalyst morphology found in thicker (>20nm) metal catalysts, the ultrathin catalyst morphology leads to the formation of nanoscale metal "islands" during the growth process, which results in curved graphene covering the catalyst. To test the effect of preactivation of the ultrathin catalyst for the formation of graphene, a preanneal process of the catalyst followed by the introduction of a carbon precursor was also investigated. The preanneal process resulted in the formation of carbon nanotubes (CNTs) in lieu of graphene, displaying the impact of the catalytic surface treatment in relation to the produced materials. The results and discussion presented here detail a low-temperature nanoscale manufacturing process that allows for the production of either graphene or CNTs on an ultrathin catalyst.