Weak flux pinning at grain boundaries in Ag sheathed Ba2YCu3O6+x tapes
Weak flux pinning at grain boundaries in Ag sheathed Ba2YCu3O6+x tapes
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Ag 护套 Ba2YCu3O6 x 带中晶界处的弱磁通钉扎
DOI：
10.1063/1.102423
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发表时间：
1989
期刊：
影响因子：
--
通讯作者：
Shojiro Ochiai
中科院分区：
文献类型：
--
作者：
K. Osamura;T. Takayama;Shojiro Ochiai
这封信涉及在4.2 K下测量的传输临界电流的控制机制。电流密度随着银包套带材的氧化物层厚度减小而增加，对于具有15μm厚层的带材，在15 T时达到1010 A/cm²。在0.5到15 T之间区域内临界电流密度的磁场依赖性可以根据E. J. Kramer [J. Appl. Phys. 44, 1360 (1973)]理论的修正模型来解释，该模型基于沿晶界的弱磁通钉扎。
This letter is concerned with the mechanism controlling the transport critical current measured at 4.2 K. The current densities increased with decreasing the oxide layer thickness of Ag sheathed tapes and reached 1010 A/cm2 at 15 T for the tape with a 15‐μm‐thick layer. The magnetic field dependence of critical current density in the region between 0.5 and 15 T can be explained in terms of a modified model of the theory by E. J. Kramer [J. Appl. Phys. 44, 1360 (1973)], based on the weak flux pinning along grain boundaries.