Passivation of Ge(100)/GeO2/high-κ gate stacks using thermal oxide treatments
Passivation of Ge(100)/GeO2/high-κ gate stacks using thermal oxide treatments
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DOI：
10.1149/1.2819626
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发表时间：
2008-01-01
影响因子：
3.9
通讯作者：
Heyns, M. M.
中科院分区：
文献类型：
--
作者：
Bellenger, F.;Houssa, M.;Heyns, M. M.
研究了Ge/GeO 2/高k栅叠层的物理和电学特性，其中GeO 2中间层在分子氧中热生长。通过原子层沉积在GeO 2夹层上原位沉积高κ层（ZrO 2、HfO 2或Al 2 O3）。这些器件的电容-电压和电导-频率特性的详细分析提供了Ge（100）表面的热氧化层的有效钝化的证据。一个更大的平带电压滞后观察到在HfO 2为基础的栅极叠层，相比于Al 2 O3栅极叠层，这可能是有关的HfO 2和GeO 2之间观察到的更明显的混合。(c)2007年电化学学会。
The physical and electrical properties of Ge/GeO2/high-kappa gate stacks, where the GeO2 interlayer is thermally grown in molecular oxygen, are investigated. The high-kappa layer (ZrO2, HfO2, or Al2O3) is deposited in situ on the GeO2 interlayer by atomic layer deposition. Detailed analysis of the capacitance-voltage and conductance-frequency characteristics of these devices provides evidence for the efficient passivation of the Ge (100) surface by its thermal oxide layer. A larger flatband voltage hysteresis is observed in HfO2-based gate stacks, as compared to Al2O3 gate stacks, which is possibly related to the more pronounced intermixing observed between the HfO2 and GeO2. (c) 2007 The Electrochemical Society.