A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate
A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate
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DOI：
10.1088/1674-1056/22/7/077309
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发表时间：
2013-07
影响因子：
1.7
通讯作者：
Q. Fu;Bo Zhang;X. Luo;Zhaoji Li
中科院分区：
文献类型：
--
作者：
Q. Fu;Bo Zhang;X. Luo;Zhaoji Li
提出并讨论了一种新型的双栅介质插入横向沟槽绝缘栅双极晶体管（DGDI LTIGBT）结构，该结构具有双扩展沟槽栅和在漂移区插入介质的特点。该器件不仅可以降低器件的比导通电阻罗恩，sp，同时还可以改善器件的温度特性。仿真结果表明，该LTIGBT在700 Acm−2时实现了1.31 V的超低导通压降，半电池间距为10.5 μm，比导通电阻罗恩，sp为187 mΩmm2，和250 V的高击穿电压。DGDI LTIGBT的通态压降比DI LTIGBT小18%，比DI LTIGBT小30.3%。比传统的LTIGBT小。所提出的LTIGBT表现出良好的正温度系数的安全并行处理较大的电流，并提高了短路能力，同时保持低的自热效应。此外，它还显示了比导通电阻和关断损耗之间的更好的折衷，尽管它具有更长的关断延迟时间。
In this paper, a novel dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor (DGDI LTIGBT) structure, which features a double extended trench gate and a dielectric inserted in the drift region, is proposed and discussed. The device can not only decrease the specific on-resistance Ron,sp, but also simultaneously improve the temperature performance. Simulation results show that the proposed LTIGBT achieves an ultra-low on-state voltage drop of 1.31 V at 700 Acm−2 with a small half-cell pitch of 10.5 μm, a specific on-resistance Ron,sp of 187 mΩmm2, and a high breakdown voltage of 250 V. The on-state voltage drop of the DGDI LTIGBT is 18% less than that of the DI LTIGBT and 30.3% less than that of the conventional LTIGBT. The proposed LTIGBT exhibits a good positive temperature coefficient for safety paralleling to handling larger currents and enhances the short-circuit capability while maintaining a low self-heating effect. Furthermore, it also shows a better tradeoff between the specific on-resistance and the turnoff loss, although it has a longer turnoff delay time.